The IXTH35N30 is a high-voltage N-channel MOSFET manufactured by Inchange Semiconductor Company Limited. This MOSFET is designed for high-speed switching applications, offering a combination of low on-resistance and fast switching speeds. It is commonly used in power supplies, motor control, and other high-power applications.

Applications

• Power supplies
• Motor control
• DC-DC converters
• Inverters
• High-frequency switching circuits

Features

• N-channel MOSFET: Provides efficient switching performance
• High voltage rating: Supports applications with high voltage requirements
• Low on-resistance: Minimizes conduction losses
• Fast switching speeds: Reduces switching losses
• Avalanche rated: Ensures robustness in demanding applications
• Isolated mounting base: Simplifies thermal management
• TO-247 package: Provides excellent thermal performance

Benefits

• Improved system efficiency: Low on-resistance reduces power dissipation
• Increased power density: High voltage and current capabilities enable compact designs
• Enhanced system reliability: Avalanche rating ensures robust operation under transient conditions
• Simplified thermal management: Isolated mounting base facilitates effective heat dissipation
• Reduced component count: High performance characteristics minimize the need for additional components
• Cost-effective solution: Provides a good balance of performance and price

Technical Specifications

The IXTH35N30 features a drain-source voltage (VDS) of 300V and a continuous drain current (ID) of 35A. It has a typical on-resistance (RDS(on)) of 95 mOhms. The device is available in a TO-247 package.

This high-voltage N-channel MOSFET is a reliable and efficient solution for high-speed switching applications. Its low on-resistance, fast switching speeds, and robust design make it a suitable choice for power supplies, motor control, and other demanding applications.