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Same model may have multiple batches, images only for reference.
AUIRFR48Z International Rectifier
Same model may have multiple batches, images only for reference.

AUIRFR48Z

Part No AUIRFR48Z
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 42A DPAK
Datasheet
AUIRFR48Z Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Infineon Technologies
Series HEXFET®
Package Bulk
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55 V
Current - Continuous Drain (Id) @ 25°C 42A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 11mOhm @ 37A, 10V
Vgs(th) (Max) @ Id 4V @ 50µA
Gate Charge (Qg) (Max) @ Vgs 60 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1720 pF @ 25 V
Power Dissipation (Max) 91W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D-Pak
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Standard Package 1 pcs
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 567153-AUIRFR48Z
Ultra Librarian 3D Model Ultra Librarian AUIRFR48Z CAD Model

Description

The AUIRFR48Z is a N-Channel MOSFET transistor from Infineon Technologies.

  • Series: HEXFET
  • Category: Discrete Semiconductor Products
  • Drain to Source Voltage (Vdss): 55V
  • Continuous Drain Current (Id): 42A
  • Maximum On-Resistance (Rds On): 11mOhm @ 37A and 10V
  • Gate-Source Voltage Threshold (Vgs(th)): 4V @ 50µA
  • Power Dissipation: 91W
  • Mounting Type: Surface mountable
  • Package: TO-252-3
  • Applications: Power supplies, motor drives, and inverters

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