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Same model may have multiple batches, images only for reference.
BCR523UE6433HTMA1 Real Image
Same model may have multiple batches, images only for reference.

BCR523UE6433HTMA1

Part No BCR523UE6433HTMA1
Manufacturer Infineon Technologies
Catalog Transistors (BJT) - Arrays, Pre - Biased
Description TRANS 2NPN PREBIAS 0.33W SC74
Datasheet
BCR523UE6433HTMA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Transistor Polarity 2 NPN - Pre-Biased (Dual)
Maximum Current Collector 500mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 1k
Resistor - Emitter Base (R2) (Ohms) 10k
Typical Gain (hFE) (Min) 70 @ 50mA, 5V
Max Vce (sat) 300mV @ 2.5mA, 50mA
Frequency - Transition 100MHz
Maximum Power Dissipation 330mW
Mounting SMD (SMT)
Case / Package PG-SC74-6
Win Source Part Number 1022734-BCR523UE6433HTMA1
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian BCR523UE6433HTMA1 CAD Model

Description

The Infineon Technologies BCR523UE6433HTMA1 is a dual NPN pre-biased transistor that is designed for use in various applications.

  • Maximum Current Collector: 500mA
  • VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
  • Typical Gain (hFE) (Min): 70 @ 50mA, 5V
  • Maximum Power Dissipation: 330mW
  • Mounting Technology: Surface-Mount Technology (SMT)
  • Package: PG-SC74-6
  • Frequency Transition: 100MHz
  • Resistors Base (R1) (Ohms): 1k
  • Emitter Base (R2) (Ohms): 10k
  • Supply and Demand Status: Sufficient

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