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BFP182R

Part No BFP182R
Manufacturer Infineon Technologies
Catalog RF Transistors (BJT)
Description TRANSISTOR RF NPN 12V SOT-143R
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Transistor Polarity NPN
VCEO Maximum Collector-Emitter Breakdown Voltage 12V
Frequency - Transition 8GHz
Noise Figure (dB Typ @ f) 0.9dB to 1.3dB @ 900MHz to 1.8GHz
Gain 22dB
Maximum Power Dissipation 250mW
Typical Gain (hFE) (Min) 70 @ 10mA, 8V
Maximum Current Collector 35mA
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-SOT143R-4
Win Source Part Number 201158-BFP182R
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian BFP182R CAD Model

Description

BFP182R RF Transistor

The BFP182R is engineered to deliver exceptional performance in RF amplification tasks, ensuring minimal signal distortion even at high frequencies, making it suitable for sophisticated communication devices.

  • Applications: RF amplification circuits, Wireless systems, Communication infrastructure
  • Features: High-frequency capability, Durable design, Low power consumption
  • Benefits: Enhances signal strength, Reduces interference, Cost-effective over long-term usage
  • Its robust design and reliability make it a trusted component for modern RF system engineers.

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