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BSC159N10LSFGATMA1

Name: BSC159N10LSFGATMA1
Brand: Infineon Technologies
SKU: 770412
Availability: InStock
Rating: 4.93 (5 reviews)

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Part No	BSC159N10LSFGATMA1
Manufacturer	Infineon Technologies
Catalog	Transistors - FETs, MOSFETs - RF
Description	MOSFET N-CH 100V 63A TDSON-8 / Trans MOSFET N-CH 100V 9.4A Automotive 8-Pin TDSON EP T/R
Datasheet	BSC159N10LSFGATMA1 Datasheet
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Categories	Discrete Semiconductor Products
Manufacturer	Infineon Technologies
Series	OptiMOS
Packaging	Reel package
Channel Type Type	N
Technology	MOSFET
Drain Source Voltage	100V
Current - Continuous Drain (Id) @ 25°C	9.4A (Ta), 63A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Vgs(th) (Maximum) @ Id	2.4V @ 72μA
Gate Charge (Qg) (Maximum) @ Vgs	35nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds	2500pF @ 50V
Vgs (Maximum)	±20V
Power Dissipation (Maximum)	114W (Tc)
Rds On (Maximum) @ Id, Vgs	15.9 mOhm @ 50A, 10V
Operating Temperature Range	-55°C ~ 150°C (TJ)
Mounting	SMD
Manufacturer Package	PG-TDSON-8
Package	8-PowerTDFN
Win Source Part Number	770412-BSC159N10LSFGATMA1
Popularity	Medium
Supply and Demand Status	Limited
Family Name	BSC159N10LSFGATMA1
Introduction Date	July 14, 2008
ECCN	EAR99
Country of Origin	Malaysia
Halogen Free	Compliant
Estimated EOL Date	2020
Ultra Librarian 3D Model	Ultra Librarian BSC159N10LSFGATMA1 CAD Model

Alternative Products

Description

The BSC159N10LSFGATMA1 is a MOSFET from Infineon Technologies.

Operating Temperature Range: -55°C to 150°C
Power Dissipation: 114W (Tc)
Continuous Drain Current: 9.4A (Ta), 63A (Tc)
Package: 8-PowerTDFN
Application: Discrete Semiconductor Products

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Pricing & Ordering

Quantity	Unit Price	Ext. Price
9+	$5.9673	$53.7057
21+	$4.8963	$102.8223
32+	$4.7433	$151.7856
44+	$4.5903	$201.9732
57+	$4.4373	$252.9261
76+	$3.9782	$302.3432

* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.

Availability: 9,417 pieces

MOQ: 9 pcs

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