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Same model may have multiple batches, images only for reference.
SIR826LDP-T1-RE3
Same model may have multiple batches, images only for reference.

SIR826LDP-T1-RE3

Part No SIR826LDP-T1-RE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 80V 21.3A/86A PPAK / N-Channel 80 V 21.3A (Ta), 86A (Tc) 5W (Ta), 83W (Tc) Surface Mount PowerPAK® SO-8
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors>FETs, MOSFETs>Single FETs, MOSFETs
Mfr Vishay
Series TrenchFET® Gen IV
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80 V
Current - Continuous Drain (Id) @ 25°C 21.3A (Ta), 86A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 5mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 91 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 3840 pF @ 40 V
FET Feature -
Power Dissipation (Max) 5W (Ta), 83W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® SO-8
Package / Case PowerPAK® SO-8
Base Product Number SIR826
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 3,000 pcs
Win Source Part Number 1383443-SIR826LDP-T1-RE3
Ultra Librarian 3D Model Ultra Librarian SIR826LDP-T1-RE3 CAD Model

Description

The SIR826LDP-T1-RE3 is a N-channel MOSFET transistor from the TrenchFET Gen IV series by Vishay.

  • Drain to Source Voltage (Vdss): 80V
  • Continuous Drain Current (Id) @ 25°C: 21.3A
  • On-Resistance (Rds On): 5mOhm @ 15A and 10V
  • Mounting: Surface Mount
  • Package: PowerPAK SO-8
  • Gate Charge (Qg) @ 10V: 91nC
  • Input Capacitance (Ciss) @ 40V: 3840pF
  • Temperature Range: -55°C to 150°C

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Quantity Unit Price Ext. Price
35+ $1.4884 $52.0940
85+ $1.2213 $103.8105
130+ $1.1831 $153.8030
175+ $1.1449 $200.3575
230+ $1.1068 $254.5640
305+ $0.9923 $302.6515
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