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Same model may have multiple batches, images only for reference.
BSS139L6327HTSA1 Real Image
Same model may have multiple batches, images only for reference.

BSS139L6327HTSA1

Part No BSS139L6327HTSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 250V 100MA SOT-23
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 250V
Continuous Drain Current at 25°C 100mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 0V, 10V
Gate-Source Threshold Voltage 1V @ 56μA
Max Gate Charge 3.5nC @ 5V
Max Input Capacitance 76pF @ 25V
Maximum Gate-Source Voltage ±20V
FET Feature Depletion Mode
Power Dissipation (Max) 360mW (Ta)
Maximum Rds On at Id,Vgs 14 Ohm @ 0.1mA, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-SOT23-3
Dimension TO-236-3, SC-59, SOT-23-3
Win Source Part Number 1024503-BSS139L6327HTSA1
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian BSS139L6327HTSA1 CAD Model

Description

The Infineon Technologies 470026 is a depletion mode N-channel MOSFET with a drain-source breakdown voltage of 250V and a continuous drain current of 100mA (Ta).

  • Drain-Source Breakdown Voltage: 250V
  • Continuous Drain Current: 100mA (Ta)
  • Gate-Source Threshold Voltage: 1V @ 56μA
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Rds On @ Id,Vgs: 14 Ohm @ 0.1mA, 10V
  • Package: PG-SOT23-3
  • Temperature Range: -55°C to 150°C (TJ)
  • Maximum Power Dissipation: 360mW (Ta)
  • Maximum Input Capacitance: 76pF @ 25V
  • Category: Discrete semiconductor products

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