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Same model may have multiple batches, images only for reference.
BSZ058N03LSGATMA1 Infineon Technologies
Same model may have multiple batches, images only for reference.

BSZ058N03LSGATMA1

Part No BSZ058N03LSGATMA1
Manufacturer Infineon Technologies
Catalog FETs - Single
Description MOSFET N-CH 30V 40A TSDSON-8
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 30V
Id - Continuous Drain Current 15A, 40A
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Maximum) at Id, Vgs 5.8mOhm at 20A, 10V
Gate Source Voltage(th) (Maximum) at Id 2.2V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 30nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 2400pF at 15V
Power Dissipation (Maximum) 2.1W, 45W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Supplier Device Package PG-TSDSON-8
Manufacturer Package 8-PowerTDFN
Manufacturer Pack Quantity 1
MSL Level 1 (Unlimited)
Win Source Part Number 722764-BSZ058N03LSGATMA1
Popularity Low
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian BSZ058N03LSGATMA1 CAD Model

Description

The Infineon BSZ058N03LSGATMA1 is an N-Channel MOSFET designed for use in a variety of applications.

  • Maximum Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 15A
  • Maximum On-Resistance: 5.8mOhm @ 20A and 10V gate-source voltage
  • Gate-Source Voltage Threshold: 2.2V @ 250μA
  • Gate Charge: 30nC @ 10V
  • Package: PG-TSDSON-8
  • Power Dissipation: 2.1W and 45W
  • Supply Voltage: 4.5V
  • Drive Voltage: 10V
  • Suitable for: Applications that require high current and low on-resistance

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280+ $0.4151 $116.2280
435+ $0.4021 $174.9135
595+ $0.3892 $231.5740
770+ $0.3762 $289.6740
1,030+ $0.3373 $347.4190
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Availability: 33,900 pieces
MOQ: 115 pcs
Order Increment : 1 pcs
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