The 414587-BSZ065N06LS5ATMA1 is a N-Channel MOSFET transistor from the OptiMOS™ series. It is designed for discrete semiconductor applications.

• Drain to Source Voltage: 60V
• Continuous Drain Current: 40A @ 25°C
• Maximum On-Resistance: 6.5mOhm @ a drain current of 20A and a gate-source voltage of 10V
• Gate Threshold Voltage: 2.3V @ a drain current of 20μA
• Power Dissipation: 46W @ a case temperature of 25°C
• Mounting Type: Surface Mountable
• Package: 8-PowerTDFN
• Supplier Device Package: PG-TSDSON-8-FL
• Gate Charge: 13nC @ a gate-source voltage of 4.5V
• Input Capacitance: 1800pF @ a drain-source voltage of 30V
• Maximum Gate-Source Voltage: ±20V
• Operating Temperature Range: -55°C to 150°C
• Product Status: Active from Infineon Technologies.