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Same model may have multiple batches, images only for reference.
CY14B104NA-BA20XI Real Image
Same model may have multiple batches, images only for reference.

CY14B104NA-BA20XI

Part No CY14B104NA-BA20XI
Manufacturer Infineon Technologies
Catalog Memory
Description IC NVSRAM 4MBIT PARALLEL 48FBGA
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Integrated Circuits (ICs) - Memory - Memory
Mfr Infineon Technologies
Package Tray
Product Status Active
Programmable Not Verified
Memory Type Non-Volatile
Memory Format NVSRAM
Technology NVSRAM (Non-Volatile SRAM)
Memory Size 4Mbit
Memory Organization 256K x 16
Memory Interface Parallel
Write Cycle Time - Word, Page 20ns
Access Time 20 ns
Voltage - Supply 2.7V ~ 3.6V
Temperature Range - Operating -40°C ~ 85°C (TA)
Mounting Type Surface Mount
Package / Case 48-TFBGA
Supplier Device Package 48-FBGA (6x10)
Base Product Number CY14B104
Standard Package 598 pcs
MSL Level 3 (168 Hours)
REACH Status REACH Unaffected
ECCN 3A991B2A
HTSUS 8542.32.0041
Win Source Part Number 581262-CY14B104NA-BA20XI
Ultra Librarian 3D Model Ultra Librarian CY14B104NA-BA20XI CAD Model

Description

The CY14B104NA-BA20XI is a 4Mbit non-volatile SRAM (NVSRAM) memory chip from Infineon Technologies.

  • Function: Memory
  • Voltage - Supply: 2.7V ~ 3.6V
  • Access Time: 20 ns
  • Mounting Type: Surface Mount
  • Package / Case: 48-TFBGA
  • Operating Temperature: -40°C ~ 85°C
  • Memory Size: 4Mbit
  • Product Status: Active
  • Application: Widely used in industries where data integrity and reliability are critical.

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