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CY14B116N-BA25XI

Part No CY14B116N-BA25XI
Manufacturer Infineon Technologies
Catalog Memory
Description IC NVSRAM 16MBIT PARALLEL 60FBGA
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Integrated Circuits (ICs) - Memory - Memory
Mfr Infineon Technologies
Package Tray
Product Status Active
Programmable Not Verified
Memory Type Non-Volatile
Memory Format NVSRAM
Technology NVSRAM (Non-Volatile SRAM)
Memory Size 16Mbit
Memory Organization 1M x 16
Memory Interface Parallel
Write Cycle Time - Word, Page 25ns
Access Time 25 ns
Voltage - Supply 2.7V ~ 3.6V
Temperature Range - Operating -40°C ~ 85°C (TA)
Mounting Type Surface Mount
Package / Case 60-LFBGA
Supplier Device Package 60-FBGA (10x18)
Base Product Number CY14B116
Standard Package 112 pcs
MSL Level 3 (168 Hours)
REACH Status REACH Unaffected
ECCN 3A991B2A
HTSUS 8542.32.0041
Win Source Part Number 916222-CY14B116N-BA25XI
Ultra Librarian 3D Model Ultra Librarian CY14B116N-BA25XI CAD Model

Description

The 916222-CY14B116N-BA25XI is an integrated circuit (IC) used for memory applications from Infineon Technologies.

  • Category: Memory - Memory in the Integrated Circuits (ICs) section
  • Series: None specified
  • Package: Tray
  • Standard Package: 112 pieces
  • Technology: NVSRAM (Non-Volatile SRAM)
  • Memory Type: Non-Volatile
  • Capacity: 16Mbit
  • Access Time: 25 ns
  • Voltage Supply: 2.7V to 3.6V
  • Mounting Type: Surface mount
  • Package: 60-LFBGA
  • Supplier Device Package: 60-FBGA (10x18)
  • Temperature Range: -40°C to 85°C
  • Memory Format: NVSRAM
  • Write Cycle Time: 25ns (word and page)
  • Memory Interface: Parallel
  • ECCN: 3A991B2A
  • MSL Level: 3 (168 hours)
  • REACH Status: Unaffected
  • HTSUS Code: 8542.32.0041
  • Product Status: Active
  • Memory Organization: 1M x 16

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