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CY62147EV30LL-45B2XI

Part No CY62147EV30LL-45B2XI
Manufacturer Infineon Technologies
Catalog IT infrastructure Memory
Description SRAM MoBL 4Mb (256Kx16)
Sample
Rohs State rohs
ECAD Module
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Category IT infrastructure Memory
Win Source Part Number 1455438-CY62147EV30LL-45B2XI
Manufacturer Infineon Technologies
Package Tray
Product Status Active
Memory Type Volatile
Memory Format SRAM
Technology SRAM - Asynchronous
Memory Size 4Mbit
Memory Organization 256K x 16
Memory Interface Parallel
Write Cycle Time - Word, Page 45ns
Access Time 45ns
Voltage - Supply 2.2 V ~ 3.6 V
Operating Temperature -40°C ~ 85°C (TA)
Grade -
Mounting Type Surface Mount
Package / Case 48-VFBGA
Supplier Device Package 48-VFBGA (6x8)
Ultra Librarian 3D Model Ultra Librarian CY62147EV30LL-45B2XI CAD Model

Description

The CY62147EV30LL-45B2XI represents a leap forward in low-power, high-performance memory solutions from Infineon/Cypress. This device is a 4Mb (256K x 16) SRAM, utilizing the company’s MoBL (More Battery Life™) technology to achieve exceptional energy efficiency. Operating with a speed of 45ns, it provides rapid access to memory, making it an excellent choice for a wide range of applications, from portable devices to high-speed automotive systems that demand significant battery savings without compromising performance. Its large storage capacity and the 16-bit configuration offer an optimal solution for systems requiring fast and reliable data access and storage, enabling more sophisticated features in consumer electronics, industrial controls, and communication devices. The compact package design of the CY62147EV30LL-45B2XI facilitates easy integration into system designs, affirming Infineon/Cypress’s commitment to providing versatile, high-quality memory solutions for the electronics industry.

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