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Same model may have multiple batches, images only for reference.
IGW30N100TFKSA1 Infineon Technologies
Same model may have multiple batches, images only for reference.

IGW30N100TFKSA1

Part No IGW30N100TFKSA1
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Description IGBT 1000V 60A 412W TO247-3
Datasheet
IGW30N100TFKSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
IGBT Type Trench Field Stop
VCEO Maximum Collector-Emitter Breakdown Voltage 1000V
Maximum Current Collector 60A
Pulsed Collector Current 90A
Collector-emitter saturation voltage(Max) 1.9V @ 15V, 30A
Maximum Power Dissipation 412W
Total Switching Energy(Ets) 3.8mJ
Input Type Standard
Gate Charge 217nC
Turn-on and Turn-off delay time 33ns/535ns
Testing Conditions 600V, 30A, 16 Ohm, 15V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package PG-TO247-3
Win Source Part Number 1045147-IGW30N100TFKSA1
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IGW30N100TFKSA1 CAD Model

Description

The Infineon Technologies 1045147-IGW30N100TFKSA1 is a high-performance IGBT transistor designed for use in various applications.

  • Component Mounting: Through Hole
  • Series: Trench Field Stop IGBT
  • Voltage - Collector Emitter Breakdown Max: 1000 V
  • Current - Collector (Ic) (Max): 60 A
  • Power - Max: 412 W
  • IGBT Type: Standard
  • Gate Charge: 217 nC
  • Vce(on) (Max) @ Vge, Ic: 1.9 V @ 15 V, 30 A
  • Total Switching Energy: 3.8 mJ
  • Turn On Delay Time: 33 ns
  • Turn Off Delay Time: 535 ns
  • Test Condition: 600V, 30A, 16 Ohm, 15V

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