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Same model may have multiple batches, images only for reference.
IKB20N65EH5ATMA1
Same model may have multiple batches, images only for reference.

IKB20N65EH5ATMA1

Part No IKB20N65EH5ATMA1
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Description INDUSTRY 14 / IGBT Trench Field Stop 650 V 38 A 125 W Surface Mount PG-TO263-3
Datasheet
IKB20N65EH5ATMA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - IGBTs - Single
Mfr Infineon Technologies
Series TrenchStop™ 5
Package Tape & Reel (TR)
IGBT Type Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) 650 V
Current - Collector (Ic) (Max) 38 A
Current - Collector Pulsed (Icm) 60 A
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 20A
Power - Max 125 W
Switching Energy 560µJ (on), 130µJ (off)
Input Type Standard
Gate Charge 48 nC
Td (on/off) @ 25°C 19ns/160ns
Test Condition 400V, 20A, 32Ohm, 15V
Reverse Recovery Time (trr) 80 ns
Temperature Range - Operating -40°C ~ 175°C (TJ)
Mounting SMD (SMT)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package PG-TO263-3
Base Product Number IKB20N65
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names SP001502642
Standard Package 1,000
Win Source Part Number 984201-IKB20N65EH5ATMA1
Ultra Librarian 3D Model Ultra Librarian IKB20N65EH5ATMA1 CAD Model

Description

The Infineon Technologies IKB20N65EH5ATMA1 is a transistor for use in IGBTs.

  • Power: 125 W
  • Reverse Recovery Time (trr): 80 ns
  • Type: Trench Field Stop IGBT
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 38 A
  • Current - Collector Pulsed (Icm): 60 A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
  • Gate Charge: 48 nC
  • Mounting: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Temperature Range: -40°C ~ 175°C (TJ)

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