IMW120R350M1HXKSA1

Part No IMW120R350M1HXKSA1
Manufacturer Infineon Technologies
Catalog FETs - Single
Description SICFET N-CH 1.2KV 4.7A TO247-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Win Source Part Number WS1202569-IMW120R350M1HXKSA1
Manufacturer Infineon Technologies
Category Discrete Semiconductor Products -Transistors -FETs, MOSFETs- Single FETs, MOSFETs
Series CoolSiC™
Package Tube
Product Status Active
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1200 V
Drive Voltage (Max Rds On, Min Rds On) 15V, 18V
Rds On (Max) @ Id, Vgs 455mOhm @ 2A, 18V

Description

The Infineon Technologies 1202569 is a high-performance N-Channel MOSFET from the CoolSiC™ series. It is designed with SiCFET (Silicon Carbide) technology, which allows for efficient power conversion and low conduction losses. With a drain-to-source voltage (Vdss) of 1200V and a maximum on-resistance (Rds On) of 455mOhm at 2A and 18V gate-source voltage (Vgs), this MOSFET is suitable for various applications that require high voltage and low power dissipation. The 1202569 comes in a tube package and is currently active in the market. It has a maximum drive voltage of 15V and minimum Rds On of 18V.

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Pricing & Ordering (USD)

Quantity Unit Price Ext. Price
8+ $6.3439 $50.7512
17+ $5.9347 $100.8899
27+ $5.7300 $154.7100
38+ $5.3207 $202.1866
49+ $5.1161 $250.6889
62+ $4.9115 $304.5130
* The above prices does not include taxes and freight rates, which will be calculated on the order pages.
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Availability: 11 pieces
MOQ: 8 pcs
Order Increment : 1 pcs
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