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IPB027N10N3G Infineon Technologies IPB027N10N3G real image14027
Same model may have multiple batches, images only for reference.
IPB027N10N3G Infineon Technologies IPB027N10N3G real image14027
IPB027N10N3G Infineon Technologies IPB027N10N3G real image14027
Same model may have multiple batches, images only for reference.

IPB027N10N3G

Part No IPB027N10N3G
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description OptiMOS®3 Power-Transistor
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Reference Date Code 16+
Reference case TO-263
Manufacturer Infineon Technologies
Manufacturer Homepage www.infineon.com
Win Source Part Number 710458-IPB027N10N3G
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IPB027N10N3G CAD Model

Description

The Infineon Technologies IPB027N10N3G is a high-performance MOSFET designed for use in a variety of applications. Infineon Technologies is the manufacturer.

  • Reference Case: TO-263
  • Date Code: 16+
  • Supply and Demand Status: Limited

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Pricing & Ordering

Quantity Unit Price Ext. Price
17+ $3.0657 $52.1169
35+ $2.8717 $100.5095
55+ $2.7747 $152.6085
78+ $2.5806 $201.2868
101+ $2.4836 $250.8436
126+ $2.3866 $300.7116
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 27,111 pieces
MOQ: 17 pcs
Order Increment : 1 pcs
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