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Same model may have multiple batches, images only for reference.
IPD060N03LGBTMA1 Real Image
Same model may have multiple batches, images only for reference.

IPD060N03LGBTMA1

Part No IPD060N03LGBTMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 50A TO252-3
Datasheet
IPD060N03LGBTMA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.2V @ 250μA
Max Gate Charge 30nC @ 10V
Max Input Capacitance 2300pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 56W (Tc)
Maximum Rds On at Id,Vgs 6 mOhm @ 30A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO252-3
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 100885-IPD060N03LGBTMA1
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IPD060N03LGBTMA1 CAD Model

Description

The Infineon Technologies IPD060N03LGBTMA1 is an Infineon Technologies product.

  • Win Source Part Number: 100885-IPD060N03LGBTMA1
  • Supply and demand status: sufficient
  • Manufacturer: Infineon Technologies
  • Website: www.infineon.com
  • Type: power MOSFET
  • Applications: high current applications such as DC-DC converters, motor control, and battery management

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Pricing & Ordering

Quantity Unit Price Ext. Price
115+ $0.5148 $59.2020
275+ $0.4225 $116.1875
425+ $0.4093 $173.9525
585+ $0.3961 $231.7185
755+ $0.3829 $289.0895
1,010+ $0.3433 $346.7330
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 29,800 pieces
MOQ: 115 pcs
Order Increment : 1 pcs
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