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IPD30N06

Part No IPD30N06
Manufacturer Infineon Technologies
Sample
Rohs State rohs
ECAD Module
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Reference Date Code 16
Reference case TO-252
Manufacturer Infineon Technologies
Manufacturer Homepage www.infineon.com
Win Source Part Number 746246-IPD30N06
Popularity Low
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IPD30N06 CAD Model

Description

The IPD30N06 is a power MOSFET from Infineon Technologies, belonging to their OptiMOS™ series. It is an N-channel enhancement mode MOSFET designed for high-efficiency power switching applications. This device features low on-state resistance (RDS(on)) and fast switching speeds, making it suitable for use in various power management and motor control systems. Its robust design and high avalanche capability ensure reliable operation in demanding environments.

Applications:

  • Synchronous rectification in SMPS: Used in synchronous rectification circuits to improve efficiency in switched-mode power supplies (SMPS).
  • DC-DC converters: Suitable for use in DC-DC converters for voltage regulation.
  • Motor control: Employed in motor control applications for efficient power switching.
  • Load switches: Used as load switches for power distribution and control.
  • Battery management systems: Found in battery management systems for efficient charging and discharging control.

Features:

  • N-channel enhancement mode: N-channel configuration allows for efficient switching.
  • Low on-state resistance (RDS(on)): Minimizes power losses and improves efficiency.
  • Fast switching speed: Enables high-frequency operation.
  • Avalanche rated: Ensures reliable operation under avalanche conditions.
  • Logic level: Can be driven directly by logic-level signals.
  • RoHS compliant: Meets environmental standards for restricted substances.
  • Halogen-free: Free from halogenated compounds.

Benefits:

  • High efficiency: Low RDS(on) and fast switching speeds contribute to high efficiency.
  • Reduced power losses: Minimizes power losses, resulting in less heat generation.
  • Improved thermal performance: Excellent thermal characteristics allow for efficient heat dissipation.
  • Increased reliability: Robust design and avalanche capability ensure reliable operation.
  • Simplified design: Logic level compatibility simplifies the design process.

Additional Details:

The IPD30N06 MOSFET has a voltage rating of 60V and a continuous drain current (ID) rating that allows it to handle significant power levels. The device is typically packaged in a TO-252 or similar package, which provides good thermal performance. The gate charge (Qg) is optimized for fast switching speeds. The IPD30N06 is widely used in various power management applications due to its excellent performance and reliability.

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Pricing & Ordering

Quantity Unit Price Ext. Price
30+ $2.0178 $60.5340
70+ $1.6551 $115.8570
110+ $1.6043 $176.4730
150+ $1.5523 $232.8450
195+ $1.5003 $292.5585
260+ $1.3456 $349.8560
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 12,200 pieces
MOQ: 30 pcs
Order Increment : 1 pcs
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