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IPN50R2K0CEATMA1

Part No IPN50R2K0CEATMA1
Manufacturer Infineon Technologies
Catalog Transistors – FETs, MOSFETs – Single
Description MOSFET N-CH 500V 3.6A SOT223
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V
Current - Continuous Drain (Id) @ 25°C 3.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 13V
Rds On (Max) @ Id, Vgs 2Ohm @ 600mA, 13V
Vgs(th) (Max) @ Id 3.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs 6 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 124 pF @ 100 V
Power Dissipation (Max) 5W (Tc)
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-SOT223-3
Package / Case TO-261-4, TO-261AA
Ultra Librarian 3D Model Ultra Librarian IPN50R2K0CEATMA1 CAD Model

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Pricing & Ordering

Quantity Unit Price Ext. Price
145+ $0.3493 $50.6485
350+ $0.2866 $100.3100
545+ $0.2777 $151.3465
745+ $0.2687 $200.1815
965+ $0.2598 $250.7070
1,290+ $0.2329 $300.4410
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 15,000 pieces
MOQ: 145 pcs
Order Increment : 1 pcs
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Shipped from HK warehouse
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