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Same model may have multiple batches, images only for reference.
IPP06CN10NGXKSA1 Real Image
Same model may have multiple batches, images only for reference.

IPP06CN10NGXKSA1

Part No IPP06CN10NGXKSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 100A TO-220
Datasheet
IPP06CN10NGXKSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 180μA
Max Gate Charge 139nC @ 10V
Max Input Capacitance 9200pF @ 50V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 214W (Tc)
Maximum Rds On at Id,Vgs 6.5 mOhm @ 100A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package PG-TO-220-3
Dimension TO-220-3
Win Source Part Number 120374-IPP06CN10NGXKSA1
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IPP06CN10NGXKSA1 CAD Model

Description

The Infineon Technologies IPP06CN10NGXKSA1 is a MOSFET transistor with an N-channel polarity.

  • Maximum Power Dissipation: 214W (Tc)
  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current at 25°C: 100A (Tc)
  • Gate-Source Threshold Voltage: 4V @ 180μA
  • Maximum Rds On at Id,Vgs: 6.5 mOhm @ 100A, 10V
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Input Capacitance: 9200pF @ 50V
  • Status: obsolete (EOL)
  • Package: PG-TO-220-3

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Pricing & Ordering

Quantity Unit Price Ext. Price
40+ $1.2806 $51.2240
100+ $1.0508 $105.0800
150+ $1.0180 $152.7000
205+ $0.9851 $201.9455
265+ $0.9523 $252.3595
355+ $0.8538 $303.0990
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Availability: 1,300 pieces
MOQ: 40 pcs
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