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IPP06CNE8N

Part No IPP06CNE8N
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description OptiMOS®2 Power-Transistor
Sample
Rohs State rohs
ECAD Module
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Manufacturer Infineon Technologies
Win Source Part Number 1186295-IPP06CNE8N
Manufacturer Homepage www.infineon.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IPP06CNE8N CAD Model

Description

The IPP06CNE8N is a high-performance OptiMOS™ power MOSFET from Infineon Technologies, designed for a wide range of applications requiring efficient power switching in synchronous rectification and DC-DC conversion. This N-channel MOSFET features an extremely low on-state resistance (Rds(on)) and optimized gate charge (Qg), leading to reduced power losses and improved overall system performance. Its enhanced characteristics make it suitable for demanding applications in servers, telecom, and industrial power supplies.

Applications:

  • Synchronous Rectification in AC-DC Power Supplies
  • DC-DC Converters
  • Server Power Supplies
  • Telecom Power Supplies
  • Industrial Power Supplies

Features:

  • Extremely low on-state resistance (Rds(on)) for minimal conduction losses
  • Optimized gate charge (Qg) for fast switching speeds
  • Avalanche rated for robust performance
  • 100% avalanche tested
  • Pb-free lead finish; RoHS compliant
  • Logic level driving capability

Benefits:

  • Increased energy efficiency in power conversion systems
  • Reduced heat dissipation, enabling smaller and more efficient designs
  • Improved system reliability due to robust avalanche performance
  • Simplified gate drive circuitry, reducing component count and cost
  • Higher power density due to optimized thermal performance
  • Environmentally friendly due to Pb-free and RoHS compliance

Additional Details:

The IPP06CNE8N is an N-channel MOSFET with a drain-source voltage (Vds) rating of 80V and a continuous drain current (Id) rating of up to 120A (depending on the case temperature). It has an extremely low typical Rds(on) of 6 mΩ at Vgs=10V, which minimizes conduction losses. The device is packaged in a TO-220 package, designed for through-hole mounting. The logic-level gate drive allows for easy interfacing with microcontrollers and other low-voltage control circuits.

This MOSFET is designed for high switching frequencies. Its low gate charge ensures fast turn-on and turn-off times, minimizing switching losses and improving overall efficiency of the power supply.

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