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Same model may have multiple batches, images only for reference.
IPP085N06LGAKSA1 Real Image
Same model may have multiple batches, images only for reference.

IPP085N06LGAKSA1

Part No IPP085N06LGAKSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 80A TO-220  /  N-Channel 60 V 80A (Tc) Through Hole PG-TO220-3-1
Datasheet
IPP085N06LGAKSA1 Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Infineon Technologies
Series OptiMOS™
Package Tube
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 80A (Tc)
Rds On (Max) @ Id, Vgs 8.5mOhm @ 80A. 10V
Vgs(th) (Max) @ Id 2V @ 125µA
Gate Charge (Qg) (Max) @ Vgs 104 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds 3500 pF @ 30 V
Mounting Type Through Hole
Supplier Device Package PG-TO220-3-1
Package / Case TO-220-3
Base Product Number IPP085N
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names IPP085N06LGX,IPP085N06LGXK,IPP085N06L G-ND,2156-IPP085N06LGAKSA1-IT,IFEINFIPP085N06LGAKSA1,IPP085N06LGIN-ND,SP000204188,IPP085N06L G,IPP085N06LGIN
Standard Package 50
Win Source Part Number 990192-IPP085N06LGAKSA1
Ultra Librarian 3D Model Ultra Librarian IPP085N06LGAKSA1 CAD Model

Description

The IPP085N06LGAKSA1 from Infineon Technologies is a discrete semiconductor product that belongs to the OptiMOS™ series.

  • Series: OptiMOS™
  • Type: N-channel MOSFET (Metal Oxide)
  • Vdss: 60 V
  • Id: 80A (Tc) @ 25°C
  • Rds On (Max) @ Id, Vgs: 8.5mOhm @ 80A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 125μA
  • Mounting Type: through-hole
  • Package/Case: TO-220-3
  • Qg (Max) @ Vgs: 104 nC @ 10 V
  • Ciss (Max) @ Vds: 3500 pF @ 30 V
  • Status: obsolete

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