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IRF3706PBF

Part No IRF3706PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 77A TO-220AB
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 77A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 2.8V, 10V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 35nC @ 4.5V
Max Input Capacitance 2410pF @ 10V
Maximum Gate-Source Voltage ±12V
Power Dissipation (Max) 88W (Tc)
Maximum Rds On at Id,Vgs 8.5 mOhm @ 15A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 1046454-IRF3706PBF
Popularity Medium
Supply and Demand Status Sufficient
Quantity per package 50
Ultra Librarian 3D Model Ultra Librarian IRF3706PBF CAD Model

Description

The Infineon Technologies IRF3706PBF is a N-Channel MOSFET transistor designed for use in discrete semiconductor products.

  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current: 77A (Tc)
  • Gate-Source Threshold Voltage: 2V @ 250μA
  • Maximum Rds On: 8.5 mOhm @ 15A, 10V
  • Package: TO-220AB
  • Mounting: Through Hole
  • Power Dissipation: 88W (Tc)
  • Maximum Gate-Source Voltage: ±12V
  • Product Status: Obsolete (EOL)
  • Popularity: Medium
  • Supply and Demand Status: Sufficient
  • Package Quantity: 50 per package

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Pricing & Ordering

Quantity Unit Price Ext. Price
8+ $8.2109 $65.6872
18+ $6.7371 $121.2678
27+ $6.5269 $176.2263
37+ $6.3155 $233.6735
48+ $6.1053 $293.0544
64+ $5.4735 $350.3040
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 26,100 pieces
MOQ: 8 pcs
Order Increment : 1 pcs
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Shipping Information

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