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Same model may have multiple batches, images only for reference.
IRF5803D2TR Real Image
Same model may have multiple batches, images only for reference.

IRF5803D2TR

Part No IRF5803D2TR
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 40V 3.4A 8-SOIC
Datasheet
IRF5803D2TR Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 3.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 37nC @ 10V
Max Input Capacitance 1110pF @ 25V
Maximum Gate-Source Voltage ±20V
FET Feature Schottky Diode (Isolated)
Power Dissipation (Max) 2W (Ta)
Maximum Rds On at Id,Vgs 112 mOhm @ 3.4A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 1046519-IRF5803D2TR
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRF5803D2TR CAD Model

Description

The Infineon Technologies IRF5803D2TR is a P-channel MOSFET with a drain-source breakdown voltage of 40V and a continuous drain current of 3.4A @ 25°C.

  • Channel Type: P-channel
  • Drain-Source Breakdown Voltage: 40V
  • Continuous Drain Current: 3.4A @ 25°C
  • Maximum Rds On: 112 mOhm @ 3.4A, 10V
  • Gate-Source Threshold Voltage: 3V @ 250μA
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Gate Charge: 37nC @ 10V
  • Mounting Type: SMD (SMT)
  • Package: 8-SO 8-SOIC (0.154", 3.90mm Width)
  • Temperature Range: -55°C to 150°C (TJ)
  • Lifecycle Status: Obsolete (EOL)
  • Popularity: Medium
  • Supply and Demand: Balanced

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145+ $1.2171 $176.4795
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340+ $1.0208 $347.0720
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