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Same model may have multiple batches, images only for reference.
IRF734
Same model may have multiple batches, images only for reference.

IRF734

Part No IRF734
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 55V 4.7A 8-SOIC
Datasheet
IRF734 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 4.7A
Maximum Rds On at Id,Vgs 50 mOhm @ 4.7A, 10V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 36nC @ 10V
Max Input Capacitance 740pF @ 25V
Maximum Power Dissipation 2W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Win Source Part Number 284284-IRF734
Popularity Medium
Supply and Demand Status Limited
Application Field Used in Industrial, Power Management
Ultra Librarian 3D Model Ultra Librarian IRF734 CAD Model

Description

The Infineon Technologies IRF734 is a dual N-Channel MOSFET with logic level gate feature.

  • Drain-Source Breakdown Voltage: 55V
  • Continuous Drain Current: 4.7A @ 25°C
  • Maximum Rds On: 50 mOhm @ 4.7A, 10V
  • Mounted On: 8-SO package
  • Gate-Source Threshold Voltage: 1V @ 250μA
  • Maximum Gate Charge: 36nC @ 10V
  • Maximum Input Capacitance: 740pF @ 25V
  • Commonly Used In: Industrial power management applications

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Pricing & Ordering

Quantity Unit Price Ext. Price
11+ $5.3453 $58.7983
27+ $4.3867 $118.4409
41+ $4.2492 $174.2172
57+ $4.1118 $234.3726
73+ $3.9755 $290.2115
98+ $3.5643 $349.3014
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