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IRF734

Name: IRF734
Brand: Infineon Technologies
SKU: 159889
Availability: InStock
Rating: 4.85 (5 reviews)

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Part No	IRF734
Manufacturer	Infineon Technologies
Catalog	Transistors - FETs, MOSFETs - RF
Description	MOSFET 2N-CH 55V 4.7A 8-SOIC
Datasheet	IRF734 Datasheet
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Categories	Discrete Semiconductor Products
Manufacturer	Infineon Technologies
Packaging	Reel - TR
Status	Active
FET Type	2 N-Channel (Dual)
FET Feature	Logic Level Gate
Drain-Source Breakdown Voltage	55V
Continuous Drain Current at 25°C	4.7A
Maximum Rds On at Id,Vgs	50 mOhm @ 4.7A, 10V
Gate-Source Threshold Voltage	1V @ 250μA
Max Gate Charge	36nC @ 10V
Max Input Capacitance	740pF @ 25V
Maximum Power Dissipation	2W
Temperature Range - Operating	-55°C to 150°C (TJ)
Mounting	SMD (SMT)
Case / Package	8-SO
Win Source Part Number	284284-IRF734
Popularity	Medium
Supply and Demand Status	Limited
Application Field	Used in Industrial, Power Management
Ultra Librarian 3D Model	Ultra Librarian IRF734 CAD Model

Description

The Infineon Technologies IRF734 is a dual N-Channel MOSFET with logic level gate feature.

Drain-Source Breakdown Voltage: 55V
Continuous Drain Current: 4.7A @ 25°C
Maximum Rds On: 50 mOhm @ 4.7A, 10V
Mounted On: 8-SO package
Gate-Source Threshold Voltage: 1V @ 250μA
Maximum Gate Charge: 36nC @ 10V
Maximum Input Capacitance: 740pF @ 25V
Commonly Used In: Industrial power management applications

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Pricing & Ordering

Quantity	Unit Price	Ext. Price
11+	$5.3453	$58.7983
27+	$4.3867	$118.4409
41+	$4.2492	$174.2172
57+	$4.1118	$234.3726
73+	$3.9755	$290.2115
98+	$3.5643	$349.3014

* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.

Availability: 3,400 pieces

MOQ: 11 pcs

Order Increment : 1 pcs

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