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IRF7342TRPBF

Name: IRF7342TRPBF
Brand: Infineon Technologies
SKU: 159895
Availability: InStock
Rating: 4.85 (982 reviews)

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Part No	IRF7342TRPBF
Manufacturer	Infineon Technologies
Catalog	Transistors - FETs, MOSFETs - RF
Description	MOSFET 2P-CH 55V 3.4A 8-SOIC
Datasheet	IRF7342TRPBF Datasheet
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Categories	Discrete Semiconductor Products
Manufacturer	Infineon Technologies
Packaging	Reel - TR
Status	Active
FET Type	2 P-Channel (Dual)
FET Feature	Logic Level Gate
Drain-Source Breakdown Voltage	55V
Continuous Drain Current at 25°C	3.4A
Maximum Rds On at Id,Vgs	105 mOhm @ 3.4A, 10V
Gate-Source Threshold Voltage	1V @ 250μA
Max Gate Charge	38nC @ 10V
Max Input Capacitance	690pF @ 25V
Maximum Power Dissipation	2W
Temperature Range - Operating	-55°C to 150°C (TJ)
Mounting	SMD (SMT)
Case / Package	8-SO
Win Source Part Number	017512-IRF7342TRPBF
Family Name	IRF7342
Introduction Date	March 17, 1999
ECCN	EAR99
Country of Origin	China
Halogen Free	Compliant
Estimated EOL Date	2024
Is this a common-used part?	Yes
Popularity	High
Supply and Demand Status	Sufficient
Ultra Librarian 3D Model	Ultra Librarian IRF7342TRPBF CAD Model

Description

The IRF7342TRPBF is a dual P-channel MOSFET transistor manufactured by Infineon Technologies.

Maximum Power Dissipation: 2W
Drain-Source Breakdown Voltage: 55V
Maximum Rds on at Id, Vgs: 105 mOhm @ 3.4A, 10V
Package: 8-SO
Gate-Source Threshold Voltage: 1V @ 250μA
Commonly Used: discrete semiconductor products

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Pricing & Ordering

Quantity	Unit Price	Ext. Price
145+	$0.3485	$50.5325
310+	$0.3265	$101.2150
480+	$0.3155	$151.4400
685+	$0.2934	$200.9790
890+	$0.2824	$251.3360
1,110+	$0.2714	$301.2540

* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.

Availability: 46,890 pieces

MOQ: 145 pcs

Order Increment : 1 pcs

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