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Same model may have multiple batches, images only for reference.
IRF7471PBF Real Image
Same model may have multiple batches, images only for reference.

IRF7471PBF

Part No IRF7471PBF
Manufacturer Infineon Technologies
Catalog FETs - Single
Description HEXFET®Power MOSFET | MOSFET N-CH 40V 10A 8-SOIC
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 40V
Id - Continuous Drain Current 10A
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Maximum) at Id, Vgs 13mOhm at 10A, 10V
Gate Source Voltage(th) (Maximum) at Id 3V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 32nC at 4.5V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 2820pF at 20V
Power Dissipation (Maximum) 2.5W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Supplier Device Package 8-SO
Manufacturer Package 8-SOIC
Manufacturer Pack Quantity 4,085
MSL Level 1 (Unlimited)
Win Source Part Number 1187298-IRF7471PBF
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Balance
Application Field Used in Computers & Computer Peripherals, Power Management
Ultra Librarian 3D Model Ultra Librarian IRF7471PBF CAD Model

Description

The Infineon Technologies IRF7471PBF is an N-channel MOSFET transistor with a maximum drain-source breakdown voltage of 40V and a continuous drain current of 10A.

  • Type: N-channel MOSFET
  • Drain-Source Breakdown Voltage: 40V
  • Continuous Drain Current: 10A
  • Maximum Power Dissipation: 2.5W
  • Gate-Source Voltage: ±20V
  • Package: 8-SOIC
  • Maximum Input Capacitance: 2820pF @ 20V
  • Supply and Demand Status: balanced
  • Application: computers and computer peripherals for power management
  • Manufacturer Pack Quantity: 4,085
  • MSL Level: 1 (Unlimited)

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