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IRF7475PBF

Part No IRF7475PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 12V 11A 8-SOIC
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 12V
Continuous Drain Current at 25°C 11A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.8V, 4.5V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 19nC @ 4.5V
Max Input Capacitance 1590pF @ 6V
Maximum Gate-Source Voltage ±12V
Power Dissipation (Max) 2.5W (Ta)
Maximum Rds On at Id,Vgs 15 mOhm @ 8.8A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 1046667-IRF7475PBF
Popularity Medium
Supply and Demand Status Balance
Quantity per package 95
Ultra Librarian 3D Model Ultra Librarian IRF7475PBF CAD Model

Description

The Infineon Technologies 1046667-IRF7475PBF is an N-channel MOSFET with a maximum power dissipation of 2.5W (Ta).

  • Manufacturer: Infineon Technologies
  • Part Number: 1046667-IRF7475PBF
  • Channel Type: N-channel
  • Maximum Power Dissipation: 2.5W (Ta)
  • Case/Package: 8-SO
  • Drain-Source Breakdown Voltage: 12V
  • Continuous Drain Current @ 25°C: 11A (Ta)
  • Gate-Source Threshold Voltage @ 250μA: 2V
  • Maximum Gate Charge @ 4.5V: 19nC
  • Maximum Input Capacitance @ 6V: 1590pF
  • Maximum Rds on @ Id,Vgs: 15 mOhm @ 8.8A, 4.5V
  • Category: Discrete Semiconductor Products
  • Status: obsolete
  • Supply and Demand: balanced
  • Quantity per Package: 95

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Pricing & Ordering

Quantity Unit Price Ext. Price
185+ $0.2727 $50.4495
450+ $0.2238 $100.7100
695+ $0.2168 $150.6760
955+ $0.2098 $200.3590
1,235+ $0.2028 $250.4580
1,655+ $0.1818 $300.8790
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 9,520 pieces
MOQ: 185 pcs
Order Increment : 1 pcs
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