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IRF7665S2TR1PBF Real Image
Same model may have multiple batches, images only for reference.

IRF7665S2TR1PBF

Part No IRF7665S2TR1PBF
Manufacturer Infineon Technologies
Catalog FETs - Single
Description Key parameters optimized for Class-D audio amplifier applications | MOSFET N-CH 100V 4.1A DFET SB
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 100V
Id - Continuous Drain Current 4.1A, 14.4A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 62mOhm at 8.9A, 10V
Gate Source Voltage(th) (Maximum) at Id 5V at 25μA
Gate Charge (Qg) (Maximum) at Vgs 13nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 515pF at 25V
Power Dissipation (Maximum) 2.4W, 30W
Temperature Range - Operating -55°C ~ 175°C
Mounting Style SMD
Supplier Device Package DIRECTFET SB
Manufacturer Package DirectFET Isometric SB
Manufacturer Pack Quantity 1
MSL Level 1 (Unlimited)
Win Source Part Number 1187339-IRF7665S2TR1PBF
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRF7665S2TR1PBF CAD Model

Description

The Infineon Technologies IRF7665S2TR1PBF is a high-performance MOSFET that is designed for use in a range of electronic devices.

  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current: 4.1A and 14.4A
  • Gate-Source Voltage: 5V @ 25μA
  • Maximum Power Dissipation: 2.4W and 30W

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