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Same model may have multiple batches, images only for reference.
IRF7807VTR Real Image
Same model may have multiple batches, images only for reference.

IRF7807VTR

Part No IRF7807VTR
Manufacturer Infineon Technologies
Catalog FETs - Single
Description N Channel Application Specific MOSFET | MOSFET N-CH 30V 8.3A 8-SOIC
Sample
Rohs State Need to verify
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tape and Reel
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 30V
Id - Continuous Drain Current 8.3A
Drive Voltage (Max Rds On, Min Rds On) 4.5V
Rds On (Maximum) at Id, Vgs 25mOhm at 7A, 4.5V
Gate Source Voltage(th) (Maximum) at Id 3V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 14nC at 5V
Gate Source Voltage (Maximum) ±20V
Power Dissipation (Maximum) 2.5W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Supplier Device Package 8-SO
Manufacturer Package 8-SOIC
Manufacturer Pack Quantity 4,000
MSL Level 1 (Unlimited)
Win Source Part Number 1187356-IRF7807VTR
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRF7807VTR CAD Model

Description

The Infineon Technologies IRF7807VTR is a N-Channel MOSFET transistor with a drain-source breakdown voltage of 30V and a continuous drain current of 8.3A.

  • Type: N-Channel MOSFET
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 8.3A
  • On-Resistance (Max): 25mOhm @ 7A and 4.5V
  • Gate-Source Voltage Threshold: 3V @ 250μA
  • Maximum Gate-Source Voltage: ±20V
  • Gate Charge: 14nC @ 5V
  • Supplier Device Package: 8-SO
  • Power Dissipation: 2.5W
  • Status: Obsolete
  • Supply and Demand: Balance
  • Manufacturer Pack Quantity: 4,000
  • ECCN: EAR99

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