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Same model may have multiple batches, images only for reference.
IRFB4410 Real Image
Same model may have multiple batches, images only for reference.

IRFB4410

Part No IRFB4410
Manufacturer Infineon Technologies
Catalog FETs - Single
Description HEXFET Power MOSFET | MOSFET N-CH 100V 96A TO-220AB
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 100V
Id - Continuous Drain Current 96A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 10mOhm at 58A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 150μA
Gate Charge (Qg) (Maximum) at Vgs 180nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 5150pF at 50V
Power Dissipation (Maximum) 250W
Temperature Range - Operating -55°C ~ 175°C
Mounting Style Through Hole
Supplier Device Package TO-220AB
Manufacturer Package TO-220-3
Manufacturer Pack Quantity 50
MSL Level 1 (Unlimited)
Win Source Part Number 1187506-IRFB4410
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRFB4410 CAD Model

Description

The Infineon Technologies IRFB4410 is a MOSFET electronic component that is now obsolete.

  • Power Dissipation: 250W
  • Vds Drain-Source Breakdown Voltage: 100V
  • Device Package: TO-220AB
  • Maximum Gate-Source Voltage: ±20V
  • Overall: It is a reliable product that can be used in various electronic applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
40+ $1.3928 $55.7120
90+ $1.1429 $102.8610
140+ $1.1071 $154.9940
190+ $1.0714 $203.5660
245+ $1.0357 $253.7465
325+ $0.9286 $301.7950
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