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IRFF9120

Part No IRFF9120
Manufacturer Infineon Technologies
Catalog HOT - SALES and EOL Components (H - K)
Description 4A, 100V, 0.60 Ohm, P-Channel Power MOSFET
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Manufacturer Infineon Technologies
Drain Current (Max) 4 A
Frequency (Max) Not Required MHz
Gate-Source Voltage (Max) ±20(V)
Output Power (Max) Not Required W
Power Dissipation 20(W)
Mounting Through Hole
Noise Figure Not Required dB
Drain-Source On-Res 0.69(ohm)
Operating Temp Range -55C to 150C
Package Type TO-39
Packaging Bulk
Pin Count 3
Polarity P
Type Power MOSFET
Number of Elements 1
Operating Temperature Classification Military
Channel Mode Enhancement
Drain Efficiency Not Required %
Drain-Source On-Volt 100(V)
Power Gain Not Required dB
Rad Hardened No
Continuous Drain Current 4(A)
DELETED Not Compliant
Win Source Part Number 040713-IRFF9120
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRFF9120 CAD Model

Description

The Infineon Technologies 040713-IRFF9120 is a power MOSFET with a P polarity and an operating temperature range of -55C to 150C.

  • Manufacturer: Infineon Technologies
  • Polarity: P
  • Operating Temperature Range: -55C to 150C
  • Mounting Style: through-hole
  • Package Type: TO-39
  • Drain-Source On-Volt: 100V
  • Drain-Source On-Res: 0.69 ohm
  • Continuous Drain Current: 4A
  • Gate-Source Voltage: +/-20V
  • Channel Mode: enhancement channel mode
  • Power Dissipation: 20W
  • Rad Hardened: not rad hardened
  • Compliance: not compliant with DELETED
  • Supply and Demand Status: limited

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