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IRFH5110TR2PBF

Part No IRFH5110TR2PBF
Manufacturer Infineon Technologies
Catalog FETs - Single
Description HEXFET Power MOSFET | MOSFET N-CH 100V 5X6 PQFN
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 100V
Id - Continuous Drain Current 11A, 63A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 12.4mOhm at 37A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 100μA
Gate Charge (Qg) (Maximum) at Vgs 72nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 3152pF at 25V
Power Dissipation (Maximum) 3.6W, 114W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Supplier Device Package 8-PQFN (5x6)
Manufacturer Package 8-PowerVDFN
Manufacturer Pack Quantity 1
MSL Level 1 (Unlimited)
Win Source Part Number 1187609-IRFH5110TR2PBF
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRFH5110TR2PBF CAD Model

Description

The Infineon Technologies 1187609-IRFH5110TR2PBF is an SMD mounted MOSFET transistor.

  • Vds - Drain-Source Breakdown Voltage: 100V
  • Id - Continuous Drain Current: 11A, 63A
  • Rds On (Maximum) @ Id, Vgs: 12.4mOhm @ 37A, 10V
  • Gate source voltage(th) (Maximum) @ Id: 4V @ 100μA
  • Gate charge (Qg) (Maximum) @ Vgs: 72nC @ 10V
  • Gate source voltage (Maximum): ±20V
  • Input capacitance (Ciss) (Maximum) @ Vds: 3152pF @ 25V
  • Status: obsolete and has a limited supply and demand status.

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.7960 $62.8600
80+ $1.4738 $117.9040
125+ $1.4276 $178.4500
170+ $1.3814 $234.8380
220+ $1.3352 $293.7440
290+ $1.1977 $347.3330
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 60,020 pieces
MOQ: 35 pcs
Order Increment : 1 pcs
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