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IRFHM792TRPBF

Part No IRFHM792TRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description Trans MOSFET N-CH 100V 2.3A 8-Pin PQFN EP T/R / MOSFET 2N-CH 100V 2.3A 8PQFN
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
FET Type 2 N-Channel (Dual)
FET Feature Standard
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 2.3A
Maximum Rds On at Id,Vgs 195 mOhm @ 2.9A, 10V
Gate-Source Threshold Voltage 4V @ 10μA
Max Gate Charge 6.3nC @ 10V
Max Input Capacitance 251pF @ 25V
Maximum Power Dissipation 2.3W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-PQFN (3.3x3.3), Power33
Win Source Part Number 1046906-IRFHM792TRPBF
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Family Name IRFHM792
Introduction Date May 10, 2011
ECCN EAR99
Country of Origin Thailand
Halogen Free Compliant
Estimated EOL Date 2027
Ultra Librarian 3D Model Ultra Librarian IRFHM792TRPBF CAD Model

Description

The Infineon Technologies IRFHM792TRPBF is a dual N-channel FET component designed for use in discrete semiconductor products.

  • Power Dissipation: 2.3W
  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current (25°C): 2.3A
  • Rds On (Id, Vgs): 195 mOhm @ 2.9A, 10V
  • Mounting: SMD (SMT)
  • Case/Package: 8-PQFN (3.3x3.3) Power33
  • Temperature Range: -55°C to 150°C (TJ)
  • Popularity: High
  • Supply and Demand: Balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
205+ $0.2864 $58.7120
495+ $0.2345 $116.0775
765+ $0.2275 $174.0375
1,050+ $0.2206 $231.6300
1,360+ $0.2125 $289.0000
1,820+ $0.1906 $346.8920
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 36,600 pieces
MOQ: 205 pcs
Order Increment : 1 pcs
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Shipping Information

Shipped from HK warehouse
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