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Same model may have multiple batches, images only for reference.
IRFR3707ZCTRLP Real Image
Same model may have multiple batches, images only for reference.

IRFR3707ZCTRLP

Part No IRFR3707ZCTRLP
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 56A DPAK
Datasheet
IRFR3707ZCTRLP Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 56A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.25V @ 25μA
Max Gate Charge 14nC @ 4.5V
Max Input Capacitance 1150pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 50W (Tc)
Maximum Rds On at Id,Vgs 9.5 mOhm @ 15A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1047052-IRFR3707ZCTRLP
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IRFR3707ZCTRLP CAD Model

Description

The Infineon Technologies IRFR3707ZCTRLP MOSFET is a surface-mount device with an N-channel polarity and a drain-source breakdown voltage of 30V.

  • Mounting: Surface Mount
  • Channel Polarity: N-Channel
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current (25°C Tc): 56A
  • Power Dissipation (Tc): 50W
  • Gate-Source Threshold Voltage: 2.25V @ 25μA
  • Maximum Gate Charge: 14nC @ 4.5V
  • Package: D-Pak
  • Leads and Tab: 2
  • Operating Temperature: -55°C to 175°C (TJ)
  • Category: Discrete Semiconductor Products
  • Status: Obsolete (EOL)

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