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Same model may have multiple batches, images only for reference.
IRFS23N20DTRLP Real Image
Same model may have multiple batches, images only for reference.

IRFS23N20DTRLP

Part No IRFS23N20DTRLP
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 200V 24A D2PAK
Datasheet
IRFS23N20DTRLP Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 200V
Continuous Drain Current at 25°C 24A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5.5V @ 250μA
Max Gate Charge 86nC @ 10V
Max Input Capacitance 1960pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 3.8W (Ta), 170W (Tc)
Maximum Rds On at Id,Vgs 100 mOhm @ 14A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1047114-IRFS23N20DTRLP
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IRFS23N20DTRLP CAD Model

Description

The IRFS23N20DTRLP is an N-Channel MOSFET manufactured by Infineon Technologies.

  • Drain-Source Breakdown Voltage: 200V
  • Continuous Drain Current: 24A @ 25°C
  • Maximum Power Dissipation: 3.8W (Ta) and 170W (Tc)
  • Package: D2PAK
  • Gate-Source Threshold Voltage: 5.5V @ 250μA
  • Maximum Rds On: 100 mOhm @ 14A and 10V

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.8025 $63.0875
80+ $1.4790 $118.3200
125+ $1.4328 $179.1000
170+ $1.3866 $235.7220
220+ $1.3404 $294.8880
290+ $1.2017 $348.4930
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