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Same model may have multiple batches, images only for reference.
IRFS4310PBF Real Image
Same model may have multiple batches, images only for reference.

IRFS4310PBF

Part No IRFS4310PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 130A D2PAK
Datasheet
IRFS4310PBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 130A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 250nC @ 10V
Max Input Capacitance 7670pF @ 50V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 300W (Tc)
Maximum Rds On at Id,Vgs 7 mOhm @ 75A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 205397-IRFS4310PBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRFS4310PBF CAD Model

Description

The Infineon Technologies 205397-IRFS4310PBF is an N-channel MOSFET transistor with a power dissipation of 300W (Tc).

  • Popularity: medium popularity product with balanced supply and demand status.
  • Application: designed for use in various applications such as power supplies, motor control, and lighting.
  • Feature: low gate charge and input capacitance, making it suitable for high-frequency switching applications.
  • Drain-Source Breakdown Voltage: 100V
  • Maximum Rds On @ Id, Vgs: 7 mOhm @ 75A, 10V.

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Quantity Unit Price Ext. Price
9+ $5.8208 $52.3872
21+ $4.7761 $100.2981
33+ $4.6268 $152.6844
45+ $4.4776 $201.4920
58+ $4.3283 $251.0414
78+ $3.8806 $302.6868
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