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Same model may have multiple batches, images only for reference.
IRFZ44NSPBF Real Image
Same model may have multiple batches, images only for reference.

IRFZ44NSPBF

Part No IRFZ44NSPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 49A D2PAK
Datasheet
IRFZ44NSPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 49A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 63nC @ 10V
Max Input Capacitance 1470pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3.8W (Ta), 94W (Tc)
Maximum Rds On at Id,Vgs 17.5 mOhm @ 25A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1047245-IRFZ44NSPBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRFZ44NSPBF CAD Model

Description

The Infineon Technologies IRFZ44NSPBF is an N-channel MOSFET transistor designed for use in discrete semiconductor products.

  • Maximum Power Dissipation: 3.8W @ Ta and 94W @ Tc
  • Continuous Drain Current @ 25°C: 49A
  • Drain-Source Breakdown Voltage: 55V
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Package: D2PAK
  • Temperature Range: -55°C to 175°C
  • Mounting Type: Surface-mount device (SMD)
  • Popularity: Medium

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Quantity Unit Price Ext. Price
70+ $0.7277 $50.9390
170+ $0.5971 $101.5070
260+ $0.5784 $150.3840
360+ $0.5598 $201.5280
465+ $0.5411 $251.6115
620+ $0.4851 $300.7620
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Availability: 32,430 pieces
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