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IRFZ44VZS Real Image
Same model may have multiple batches, images only for reference.

IRFZ44VZS

Part No IRFZ44VZS
Manufacturer Infineon Technologies
Catalog FETs - Single
Description Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=57A) | MOSFET N-CH 60V 57A D2PAK
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 60V
Id - Continuous Drain Current 57A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 12mOhm at 34A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 65nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 1690pF at 25V
Power Dissipation (Maximum) 92W
Temperature Range - Operating -55°C ~ 175°C
Mounting Style SMD
Supplier Device Package D2PAK
Manufacturer Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Manufacturer Pack Quantity 50
MSL Level 1 (Unlimited)
Win Source Part Number 1188193-IRFZ44VZS
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IRFZ44VZS CAD Model

Description

The Infineon IRFZ44VZS is an N-Channel MOSFET transistor with a maximum drain-source breakdown voltage of 60V and a continuous drain current of 57A.

  • Drain-Source Breakdown Voltage (Max): 60V
  • Continuous Drain Current (Id): 57A
  • Rds On (Maximum) @ Id, Vgs: 12mOhm @ 34A, 10V
  • Gate-Source Voltage (th): 4V @ 250μA
  • Gate Charge (Qg) @ Vgs: 65nC @ 10V
  • Input Capacitance (Ciss) @ Vds: 1690pF @ 25V
  • Package / Case: D2PAK
  • Power Dissipation (Max): 92W
  • Product Use: Discrete Semiconductor Products
  • Product Status: Obsolete
  • Supply and Demand Status: Sufficient

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