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Same model may have multiple batches, images only for reference.
IRGP4740DPBF Real Image
Same model may have multiple batches, images only for reference.

IRGP4740DPBF

Part No IRGP4740DPBF
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Description Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode | IGBT 650V TO-247
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube
Status Obsolete
Voltage - Collector Emitter Breakdown (Maximum) 650V
Current - Collector (Ic) (Maximum) 60A
Current - Collector Pulsed (Icm) 72A
Vce(on) (Maximum) at Vge, Ic 2V at 15V, 24A
Maximum Power 250W
Switching Energy 520μJ (on), 240μJ (off)
Input Type Standard
Gate Charge 70nC
Td (on/off) at 25°C 24ns/73ns
Test Condition 400V, 24A, 10Ohm, 15V
Reverse Recovery Time (trr) 170ns
Temperature Range - Operating -40°C ~ 175°C
Mounting Style Through Hole
Manufacturer Package TO-247-3
Supplier Device Package TO-247AD
Manufacturer Pack Quantity 25
MSL Level 1 (Unlimited)
Win Source Part Number 1188376-IRGP4740DPBF
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRGP4740DPBF CAD Model

Description

The Infineon Technologies IRGP4740DPBF is a through-hole IGBT transistor used in power management, motor drive and control applications.

  • Maximum Collector Current: 60A
  • Maximum Collector-Emitter Breakdown Voltage: 650V
  • Reverse Recovery Time: 170ns
  • Switching Energy: 520μJ (on) and 240μJ (off)
  • Gate Charge: 70nC
  • Operating Temperature Range: -40°C to 175°C
  • Package: TO-247AD package
  • Maximum Power: 250W
  • Vce(on) (Maximum) @ Vge, Ic: 2V @ 15V, 24A
  • Status: obsolete
  • Popularity: medium

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