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IRLML2502TR

Part No IRLML2502TR
Manufacturer Infineon Technologies
Catalog FETs - Single
Description HEXFETPower MOSFET | MOSFET N-CH 20V 4.2A SOT-23
Sample
Rohs State Need to verify
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Cut Tape (CT)
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 20V
Id - Continuous Drain Current 4.2A
Drive Voltage (Max Rds On, Min Rds On) 2.7V, 4.5V
Rds On (Maximum) at Id, Vgs 45mOhm at 4.2A, 4.5V
Gate Source Voltage(th) (Maximum) at Id 1.2V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 12nC at 5V
Gate Source Voltage (Maximum) ±12V
Input Capacitance (Ciss) (Maximum) at Vds 740pF at 15V
Power Dissipation (Maximum) 1.25W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Supplier Device Package Micro3/SOT-23
Manufacturer Package TO-236-3, SC-59, SOT-23-3
Manufacturer Pack Quantity 1
MSL Level 1 (Unlimited)
Win Source Part Number 1188582-IRLML2502TR
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IRLML2502TR CAD Model

Description

The 1188582-IRLML2502TR from Infineon Technologies is a high-quality MOSFET transistor that is designed to deliver exceptional performance and reliability.

  • Maximum Power Dissipation: 1.25W
  • Drain-Source Breakdown Voltage: 20V
  • Transistor Polarity: N-channel
  • Supplier Device Package: Micro3/SOT-23
  • Drive Voltage: 2.7V for maximum Rds on and 4.5V for minimum Rds on
  • Operating Temperature: -55°C to 150°C
  • Manufacturer: Infineon Technologies

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Pricing & Ordering

Quantity Unit Price Ext. Price
165+ $0.3089 $50.9685
350+ $0.2894 $101.2900
540+ $0.2796 $150.9840
770+ $0.2600 $200.2000
1,000+ $0.2503 $250.3000
1,250+ $0.2405 $300.6250
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 138,280 pieces
MOQ: 165 pcs
Order Increment : 1 pcs
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