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IRLU8729PBF

Part No IRLU8729PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 58A IPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 58A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.35V @ 25μA
Max Gate Charge 16nC @ 4.5V
Max Input Capacitance 1350pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 55W (Tc)
Maximum Rds On at Id,Vgs 8.9 mOhm @ 25A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package I-Pak
Dimension TO-251-3 Short Leads, IPak, TO-251AA
Win Source Part Number 205494-IRLU8729PBF
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRLU8729PBF CAD Model

Description

The Infineon Technologies IRLU8729PBF is an N-channel MOSFET that comes in an I-Pak package with dimensions of TO-251-3 Short Leads, IPak, TO-251AA.

  • Maximum Power Dissipation: 55W (Tc)
  • Continuous Drain Current: 58A (Tc) @ 25°C
  • Drain-Source Breakdown Voltage: 30V
  • Maximum Rds On: 8.9 mOhm @ 25A, 10V
  • Gate-Source Threshold Voltage: 2.35V @ 25μA
  • Maximum Gate Charge: 16nC @ 4.5V
  • Status: Obsolete (EOL)
  • Used In: Various applications, including power management, motor drive, and industrial

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Pricing & Ordering

Quantity Unit Price Ext. Price
6+ $10.5544 $63.3264
14+ $8.6602 $121.2428
21+ $8.3899 $176.1879
29+ $8.1185 $235.4365
37+ $7.8482 $290.3834
50+ $7.0363 $351.8150
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 9,600 pieces
MOQ: 6 pcs
Order Increment : 1 pcs
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