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ISC058N04NM5ATMA1

Part No ISC058N04NM5ATMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description 40V 5.8M OPTIMOS MOSFET SUPERSO8 / N-Channel 40 V 17A (Ta), 63A (Tc) 3W (Ta), 42W (Tc) Surface Mount PG-TDSON-8 FL
Datasheet
Sample
Rohs State rohs
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Infineon Technologies
Series OptiMOS™-5
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 17A (Ta) , 63A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 7V, 10V
Rds On (Max) @ Id, Vgs 5.8mOhm @ 31A, 10V
Vgs(th) (Max) @ Id 3.4V @ 13µA
Gate Charge (Qg) (Max) @ Vgs 16 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1100 pF @ 20 V
Power Dissipation (Max) 3W (Ta) , 42W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TDSON-8 FL
Package / Case 8-PowerTDFN
Base Product Number ISC058N
Standard Package 5,000
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1338462-ISC058N04NM5ATMA1
Ultra Librarian 3D Model Ultra Librarian ISC058N04NM5ATMA1 CAD Model

Description

The Infineon ISC058N04NM5ATMA1 OptiMOS™-5 MOSFET is an N-Channel FET with a drain to source voltage of 40V and a maximum power dissipation of 3W (Ta) or 42W (Tc).

  • FET Type: N-Channel
  • Vdss Drain to Source Voltage: 40V
  • Power Dissipation (Max): 3W (Ta), 42W (Tc)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: PG-TDSON-8 FL
  • Vgs Gate-Source Voltage (Max): ±20V

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Pricing & Ordering

Quantity Unit Price Ext. Price
70+ $0.7277 $50.9390
170+ $0.5971 $101.5070
260+ $0.5784 $150.3840
360+ $0.5598 $201.5280
465+ $0.5411 $251.6115
620+ $0.4851 $300.7620
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 9,380 pieces
MOQ: 70 pcs
Order Increment : 1 pcs
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