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Same model may have multiple batches, images only for reference.
SPB16N50C3 Infineon Technologies
Same model may have multiple batches, images only for reference.

SPB16N50C3

Part No SPB16N50C3
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 560V 16A TO-263
Datasheet
SPB16N50C3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 560V
Continuous Drain Current at 25°C 16A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.9V @ 675μA
Max Gate Charge 66nC @ 10V
Max Input Capacitance 1600pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 160W (Tc)
Maximum Rds On at Id,Vgs 280 mOhm @ 10A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO263-3-2
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 133396-SPB16N50C3
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SPB16N50C3 CAD Model

Description

The Infineon Technologies SPB16N50C3 is an N-channel MOSFET that is suitable for use in various applications.

  • Drain-Source Breakdown Voltage: 560V
  • Continuous Drain Current: 16A (Tc)
  • Polarity: N-channel
  • Maximum Rds On @ Id,Vgs: 280 mOhm @ 10A, 10V
  • Package: PG-TO263-3-2
  • Mounting: SMD (SMT)
  • Maximum Power Dissipation: 160W (Tc)
  • Gate-Source Threshold Voltage: 3.9V @ 675μA
  • Temperature Range: -55°C to 150°C (TJ)

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23+ $5.2310 $120.3130
35+ $5.0681 $177.3835
48+ $4.9041 $235.3968
61+ $4.7413 $289.2193
82+ $4.2504 $348.5328
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