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SPB18P06P

Part No SPB18P06P
Manufacturer Infineon Technologies
Catalog FETs - Single
Description SIPMOS Power-Transistor | MOSFET P-CH 60V 18.7A D2PAK
Sample
Rohs State Need to verify
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tape and Reel
Status Obsolete
Transistor Polarity P-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 60V
Id - Continuous Drain Current 18.7A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 130mOhm at 13.2A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 1mA
Gate Charge (Qg) (Maximum) at Vgs 28nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 860pF at 25V
Power Dissipation (Maximum) 81.1W
Temperature Range - Operating -55°C ~ 175°C
Mounting Style SMD
Supplier Device Package D2PAK (TO-263AB)
Manufacturer Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Manufacturer Pack Quantity 1,000
MSL Level 1 (Unlimited)
Win Source Part Number 1257797-SPB18P06P
Manufacturer Homepage www.infineon.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SPB18P06P CAD Model

Description

The Infineon Technologies SPB18P06P is an obsolete electronic component manufactured by Infineon Technologies.

  • Win Source Part Number: 1257797-SPB18P06P
  • Transistor Type: MOSFET
  • Channel Polarity: P-channel
  • Maximum Drain-Source Breakdown Voltage: 60V
  • Applications: power supplies, motor control, and lighting
  • Package: TO-263AB
  • Maximum Power Dissipation: 81.1W

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Pricing & Ordering

Quantity Unit Price Ext. Price
145+ $0.4043 $58.6235
350+ $0.3315 $116.0250
540+ $0.3211 $173.3940
745+ $0.3107 $231.4715
965+ $0.3003 $289.7895
1,290+ $0.2691 $347.1390
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,000 pieces
MOQ: 145 pcs
Order Increment : 1 pcs
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