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Same model may have multiple batches, images only for reference.
IXFH12N100 Real Image
Same model may have multiple batches, images only for reference.

IXFH12N100

Part No IXFH12N100
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 1KV 12A TO-247AD
Datasheet
IXFH12N100 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 1000V
Continuous Drain Current at 25°C 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.5V @ 4mA
Max Gate Charge 155nC @ 10V
Max Input Capacitance 4000pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 300W (Tc)
Maximum Rds On at Id,Vgs 1.05 Ohm @ 6A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-247AD (IXFH)
Dimension TO-247-3
Win Source Part Number 1049359-IXFH12N100
Popularity Medium
Supply and Demand Status Balance
Quantity per package 30
Ultra Librarian 3D Model Ultra Librarian IXFH12N100 CAD Model

Description

IXYS IXFH12N100 is an N-channel MOSFET transistor that has a continuous drain current of 12A at 25°C and a breakdown voltage of 1000V.

  • Continuous Drain Current @ 25°C: 12A
  • Breakdown Voltage: 1000V
  • Maximum Rds On: 1.05 Ohm @ 6A and 10V
  • Package: TO-247AD
  • Gate-Source Threshold Voltage: 4.5V @ 4mA
  • Maximum Gate Charge: 155nC @ 10V
  • Input Capacitance: 4000pF @ 25V
  • Manufacturer: IXYS
  • Popularity: Medium
  • Supply and Demand Status: Balanced
  • Quantity per Package: 30

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Pricing & Ordering

Quantity Unit Price Ext. Price
6+ $10.3234 $61.9404
14+ $8.4708 $118.5912
22+ $8.2063 $180.5386
30+ $7.9406 $238.2180
38+ $7.6761 $291.6918
51+ $6.8826 $351.0126
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Availability: 7 pieces
MOQ: 6 pcs
Order Increment : 1 pcs
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