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Same model may have multiple batches, images only for reference.
IXFH15N100P Real Image
Same model may have multiple batches, images only for reference.

IXFH15N100P

Part No IXFH15N100P
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 1000V 15A TO-247
Datasheet
IXFH15N100P Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 1000V
Continuous Drain Current at 25°C 15A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 6.5V @ 1mA
Max Gate Charge 97nC @ 10V
Max Input Capacitance 5140pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 543W (Tc)
Maximum Rds On at Id,Vgs 760 mOhm @ 500mA, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-247AD (IXFH)
Dimension TO-247-3
Win Source Part Number 1049377-IXFH15N100P
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IXFH15N100P CAD Model

Description

The IXFH15N100P is an N-channel MOSFET transistor that is ideal for use in various applications such as power management, load switching, and battery protection.

  • Drain-Source Breakdown Voltage: 1000V
  • Continuous Drain Current: 15A @ 25°C
  • Maximum On-Resistance: 760mOhm @ 500mA, 10V
  • Gate-Source Threshold Voltage: 6.5V @ 1mA
  • Maximum Input Capacitance: 5140pF @ 25V
  • Power Dissipation: 543W @ Tc
  • Package/Case: TO-247AD (IXFH)
  • Dimension: TO-247-3
  • Mounting Type: Through Hole

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12+ $10.2030 $122.4360
18+ $9.8840 $177.9120
25+ $9.5652 $239.1300
32+ $9.2464 $295.8848
42+ $8.2899 $348.1758
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