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Same model may have multiple batches, images only for reference.
IXFH86N30T Real Image
Same model may have multiple batches, images only for reference.

IXFH86N30T

Part No IXFH86N30T
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description Trans MOSFET N-CH 300V 86A 3-Pin(3+Tab) TO-247 / MOSFET N-CH 300V 86A TO-247
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 300V
Continuous Drain Current at 25°C 86A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 4mA
Max Gate Charge 180nC @ 10V
Max Input Capacitance 11300pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 860W (Tc)
Maximum Rds On at Id,Vgs 43 mOhm @ 43A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-247AD (IXFH)
Dimension TO-247-3
Win Source Part Number 1049458-IXFH86N30T
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Family Name IXFH86N30T
Introduction Date March 28, 2014
ECCN EAR99
Country of Origin Republic of Korea
Estimated EOL Date 2029
Ultra Librarian 3D Model Ultra Librarian IXFH86N30T CAD Model

Description

The IXYS IXFH86N30T MOSFET is a high-performance N-Channel transistor designed for use in discrete semiconductor products.

  • Maximum Power Dissipation: 860W (Tc)
  • Drain-Source Breakdown Voltage: 300V
  • Continuous Drain Current: 86A (Tc) @ 25°C
  • Maximum Rds On: 43 mOhm @ 43A, 10V
  • Gate-Source Threshold Voltage: 5V @ 4mA
  • Maximum Gate Charge: 180nC @ 10V
  • Package: TO-247AD
  • Temperature Range: -55°C to 150°C (TJ)

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