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IXFN70N60Q2

Name: IXFN70N60Q2
Brand: IXYS
SKU: 1323883
Availability: InStock
Rating: 4.93 (5 reviews)

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Part No	IXFN70N60Q2
Manufacturer	IXYS
Catalog	Transistors - FETs, MOSFETs - RF
Description	MOSFET N-CH 600V 70A SOT-227B / N-Channel 600 V 70A (Tc) 890W (Tc) Chassis Mount SOT-227B
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Category	Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Manufacturer	IXYS
Packaging	Tube
Product Status	Not For New Designs
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600 V
Current - Continuous Drain (Id) @ 25°C	70A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	80mOhm @ 35A, 10V
Vgs(th) (Max) @ Id	5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs	265 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	7200 pF @ 25 V
Power Dissipation (Max)	890W (Tc)
Temperature Range - Operating	-55°C ~ 150°C (TJ)
Mounting	Chassis Mount
Supplier Device Package	SOT-227B
Case / Package	SOT-227-4, miniBLOC
Base Product Number	IXFN70
RoHS Status	ROHS3 Compliant
MSL Level	1 (Unlimited)
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	10
Win Source Part Number	1323883-IXFN70N60Q2
Ultra Librarian 3D Model	Ultra Librarian IXFN70N60Q2 CAD Model

Alternative Products

Description

The IXYS IXFN70N60Q2 is a N-channel MOSFET transistor that comes in a SOT-227B package.

Manufacturer: IXYS
Drain to Source Voltage: 600V
Continuous Drain Current @ 25°C: 70A
Maximum On-Resistance: 80mOhm @ 35A and 10V
Gate Charge: 265nC @ 10V
Input Capacitance: 7200pF @ 25V
Power Dissipation @ Tc: 890W
Package: SOT-227B
Ideal for: chassis mount applications.

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Pricing & Ordering

Quantity	Unit Price	Ext. Price
1+	$58.6336	$58.6336
2+	$54.9226	$109.8452
3+	$53.0671	$159.2013
5+	$49.3561	$246.7805
6+	$47.5006	$285.0036
7+	$45.6451	$319.5157

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