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G10N03S

Name: G10N03S
Brand: Goford Semiconductor
SKU: 1376828
Availability: InStock
Rating: 4.93 (5 reviews)

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Part No	G10N03S
Manufacturer	Goford Semiconductor
Catalog	Transistors - FETs, MOSFETs - RF
Description	N30V,RD(MAX)<12M@10V,RD(MAX)<16M
Datasheet	G10N03S Datasheet
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Category	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr	Goford Semiconductor
Series	-
Package	Tape & Reel
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V
Current - Continuous Drain (Id) @ 25°C	10A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	12mOhm @ 6A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	17 nC @ 4.5 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	839 pF @ 15 V
FET Feature	-
Power Dissipation (Max)	2.5W (Tc)
Temperature Range - Operating	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-SOP
Package / Case	8-SOIC (0.154", 3.90mm Width)
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095
Win Source Part Number	1376828-G10N03S
Ultra Librarian 3D Model	Ultra Librarian G10N03S CAD Model

Alternative Products

Description

The G10N03S is an N-Channel MOSFET transistor from Goford Semiconductor.

Type: N-Channel MOSFET
Category: Discrete Semiconductor Products
Temperature Range: -55°C to 150°C
Package: 8-SOIC
Packaging: Tape & Reel
Drain-to-Source Voltage (Vdss): 30V
Continuous Drain Current (Id): 10A
Rds On: 12mOhm @ 6A and 10V
Gate Charge (Qg): 17nC @ 4.5V
Maximum Gate-Source Voltage (Vgs): ±20V
Applications: Power Electronics

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